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GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

Model DL-HP10SIRA-1SIR120

GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

Overview

DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD in Shenzhen, Guangdong lists GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode under Diodes. Certification ISO9001:2008,ROHS, chip material GaAlAs and power dissipation 1000mW are among the specifications published.

Technical specifications

CertificationISO9001:2008,ROHS
Chip MaterialGaAlAs
Power Dissipation1000mW
Reverse Voltage5V
Peak Emission Wavelength850nm
Forward Current350mA
Viewing Angle120 Deg
Part No.Chip Material
Lens ColorSource Color
Dl-Hp10Sira-1Sir120GaAlAs
Water ClearInfrared
DiameterLED Infrared
Forward Voltage @20ma0.8-1.8V
ApplicationInfrared remote control Toys

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